Large Signal Evaluation of Nonlinear HBT Model
نویسندگان
چکیده
ABSTRACT — The recently developed LS HBT model was evaluated with extensive Power spectrum, Load pull and Inter-modulation investigations. Some changes of the model were made, like improved temperature, leakage resistance and capacitance models. The corresponding changes were implemented in ADS as SDD. Important future of the model is that the model parameters are organized to use directly measured parameters in rather simple and understandable way. Modeling results were compared with multiple DC, Sparameters and LS data and show good accuracy despite the simplicity of the model. To our knowledge the HBT model is one of the few HBT models which can handle high current &Power HBT devices, with significantly less model parameters with good accuracy.
منابع مشابه
Noise, Large-Signal Modeling and Characterization of InP/InGaAs HBTs
We developed a robust large-signal model for InP/InGaAs HBTs. DC, small-signal, noise and power characteristics of InP/InGaAs HBTs are measured over a wide range of frequencies and bias conditions. A minimum noise figure (FMIN) of 3.5dB, and a gain of 16.8dB are achieved at 10-GHz. These measurement results are the basis for robust nonlinear models of InP/InGaAs HBT devices.
متن کاملUnderstanding Base Biasing Influence on Large Signal Behavior in HBTs
Large-signal behavior of HBT devices can depend strongly on the type of source used to bias the base of the devices. Understanding of this behavior is advanced using sample device measurements and model simulations. The device used is a wafer-level InGaP/GaAs HBT represented with a modified GummelPoon non-linear model. Results show that the use of constant voltage source allowed for a higher po...
متن کاملA Temperature Dependent Scalable Large Signal InP/InGaAs DHBT Model
Modern radio frequency and mixed signal circuit design has increasingly relied on compound semiconductor devices to push operating frequencies deep into millimeter-wave range. InP/InGaAs/InP heterojunction bipolar transistors are capable of achieving both a unity current gain frequency (fT) and maximum frequency of oscillation (fMAX) in excess of 300GHz as well as high linearity and good therma...
متن کاملAdaptive Fuzzy Dynamic Sliding Mode Control of Nonlinear Systems
Two phenomena can produce chattering: switching of input control signal and the large amplitude of this switching (switching gain). To remove the switching of input control signal, dynamic sliding mode control (DSMC) is used. In DSMC switching is removed due to the integrator which is placed before the plant. However, in DSMC the augmented system (system plus the integrator) is one dimension bi...
متن کاملLarge-Signal Microwave Characterization of AlGaAs/GaAs HBTÆs Based on a Physics-Based Electrothermal - Microwave Theory and Techniques, IEEE Transactions on
A physics-based multicell electrothermal equivalent circuit model is described that is applied to the large-signal microwave characterization of AlGaAs/GaAs HBT’s. This highly efficient model, which incorporates a new multifinger electrothermal model, has been used to perform dc, small-signal and loadpull characterization, and investigate parameter-spreads due to fabrication process variations....
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
- IEICE Transactions
دوره 91-C شماره
صفحات -
تاریخ انتشار 2008